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| Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic-Metal/Ceramic Package Absolute Maximum Ratings at 25C :2.54) Parameter Collector-Emitter Voltage ( Symbol V ES v EBO 1 Rating 65 3.0 2.4 146 200 -65 1 Units V .I672 010 304s 301 ID0 (2.54) - I- Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation Junction Temperature StorageTemperature V A w "C "C LIN:;SS 3T"ERV!SE NC;D, TOLERbNCS A?E `c P TOT TJ T Sit ..^^ ! --J-f -.I. i .06o='.oozJ ~1.52Z.05) INCKS (M!cLIMETERS k.005' z.13MM) 1 to +200 Electrical Characteristics Parameter Collector-Emitter Collector-Emitter Breakdown Voltage Leakage Current at 25C 1 Symbol BV,,, `CES ( Min 65 ( Max 1.5 1.2 1 Units ( V mA "CM' W dB I,=10 mA vc,=40 V,,=36 V,,=36 v V, P,,f20 TestConditions Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load MismatchTolerance R THUCI PIN GP `lC W, Fz3.1, 3.25,3.4 GHz GHz 7.5 3.56 - V, P 0UT=2OW, F=3.1, 3.25,3.4 Vct=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz 35 6 - 2:l % dB - V,,=36 V, PO,,=20 W, Fz3.1, 3.25, 3.4 GHz `I,,=36 V,,=36 V, P,,e20 W, F=3.1,3.25,3.4 GHz RL VSWR-T V, Pour=20 W, F=3.25 GHz Specifications Subject to Change Without Notice. Radar Pulsed Power Transistor, 20W PH3134-2OL v2.00 RF Test Fixture BNC CONNECTOR 2451 INSULATED JUMPER PDULINA ELECT, PC BOARDS, WSGLnER LUG FI FCl-Rlll YTIC CAPACI TOR M/A-&M 2052-5636-02 2 PLACES -04 ? \- ! CHIP a;I pr CAPACITOR. ATClOOA BASE PLATE, ALUMINUM 73050258~04 L BOARD CARRIER, BRASS 73050258-03 TOP VIEV 1 \ bMS;STDR TRANSISTllf? NORYL 73050258-05 CARRIER CLAMP, 73050258-01 Test Fixture PC Board Dimensions ... b s i "a |
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